APTM50SKM19G APTM50SKM19G ? rev 3 july, 2006 www.microsemi.com 1 ? 6 q1 s1 out 0/vb us cr2 vb us g1 out g1 s1 0/vbus vbus absolute maximum ratings these devices are sensitive to electrostatic discharge. proper handing procedures should be followed . see application note apt0502 on www.microsemi.com s ymbol parameter max ratings unit v dss drain - source breakdown voltage 500 v t c = 25c 163 i d continuo us drain current t c = 80c 122 i dm pulsed drain current 652 a v gs gate - source voltage 30 v r dson drain - source on resistance 22.5 m ? p d maximum power dissipation t c = 25c 1136 w i ar avalanche current (repetitive and non repetitive) 46 a e ar repetitive avalanche energy 50 e as single pulse avalanche energy 2500 mj v dss = 500v r dson = 19m ? typ @ tj = 25c i d = 163a @ tc = 25c applicatio n ? ac and dc motor control ? switched mode power supplies features ? power mos 7 ? mosfets - low r dson - low input and miller capacitance - low gate c harge - avalanche energy rated - very rugged ? kelvin source for easy drive ? very low stray inductance - symmetrical design - m5 power connectors ? high level of integration benefits ? outsta ndi ng perfor ma nce at hi gh freq ue nc y operation ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? low profile ? rohs compliant b uck choppe r mosfet power module
APTM50SKM19G APTM50SKM19G ? rev 3 july, 2006 www.microsemi.com 2 ? 6 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit v gs = 0v,v ds = 500v t j = 25c 200 i dss zero gate voltage drain current v gs = 0v,v ds = 400v t j = 125c 1000 a r ds(on) drain ? source on resistance v gs = 10v, i d = 81.5a 19 22.5 m ? v gs(th) gate threshold voltage v gs = v ds , i d = 10ma 3 5 v i gs s gate ? source leakage current v gs = 30 v, v ds = 0v 200 na dynamic characteristics symbol characteristic test conditions min typ max unit c is s input capacitance 22.4 c oss output capacitance 4.8 c rss reverse transfer capacitance v gs = 0v v ds = 25v f = 1mhz 0.36 nf q g total gate charge 492 q gs gate ? source charge 132 q gd gate ? drain charge v gs = 10v v bus = 250v i d = 163a 260 nc t d(on) tur n-o n delay ti me 18 t r rise time 35 t d(off) turn-off delay time 87 t f fall time inductive switching @ 125c v gs = 15v v bus = 333v i d = 163a r g = 1 ? 77 ns e on turn-on switching energy 3020 e off turn-off switching energy inductive switching @ 25c v gs = 15v, v bus = 333v i d = 163a, r g = 1 ? 2904 j e on turn-on switching energy 4964 e off turn-off switching energy inductive switching @ 125c v gs = 15v, v bus = 333v i d = 163a, r g = 1 ? 3384 j chopper diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 600 v t j = 25c 350 i rm maximum reverse leakage current v r =600v t j = 125c 600 a i f dc forward current t c = 70c 120 a i f = 120a 1.6 1.8 i f = 240a 1.9 v f diode forward voltage i f = 120a t j = 125c 1.4 v t j = 25c 130 t rr reverse recovery time t j = 125c 170 ns t j = 25c 440 q rr reverse recovery charge i f = 120a v r = 400v di/dt = 400a/s t j = 125c 1840 nc
APTM50SKM19G APTM50SKM19G ? rev 3 july, 2006 www.microsemi.com 3 ? 6 thermal and package characteristics symbol characteristic min typ max unit transistor 0.11 r thjc junction to case thermal resistance diode 0.46 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 2500 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 100 c to heatsink m6 3 5 torque mounting torque for terminals m5 2 3.5 n.m wt package weight 280 g sp6 package outline (dimensions in mm) see application note apt0601 - mounting instructions for sp6 power modules on www.microsemi.com
APTM50SKM19G APTM50SKM19G ? rev 3 july, 2006 www.microsemi.com 4 ? 6 typical performance curve 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.02 0.04 0.06 0.08 0.1 0.12 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) maximum effective transient thermal impedance, junction to case vs pulse duration 5.5v 6v 6.5v 7v 7.5v 8v 0 100 200 300 400 500 600 700 0 5 10 15 20 25 v ds , drain to source voltage (v) i d , drain current (a) v gs =10&15v low voltage output characteristics transfert characteristics t j =-55c t j =25c t j =125c 0 100 200 300 400 500 012345678 v gs , gate to source voltage (v) i d , drain current (a) v ds > i d (on)xr ds (on)max 250s pulse test @ < 0.5 duty cycle r ds (on) vs drain current v gs =10v v gs =20v 0.80 0.85 0.90 0.95 1.00 1.05 1.10 1.15 1.20 0 100 200 300 400 i d , drain current (a) r ds (on) drain to source on resistance normalized to v gs =10v @ 81.5a 0 20 40 60 80 100 120 140 160 180 25 50 75 100 125 150 t c , case temperature (c) i d , dc drain current (a) dc drain current vs case temperature
APTM50SKM19G APTM50SKM19G ? rev 3 july, 2006 www.microsemi.com 5 ? 6 0.7 0.8 0.9 1.0 1.1 1.2 -50 -25 0 25 50 75 100 125 150 t j , junction temperature (c) breakdown voltage vs temperature bv dss , drain to source breakdown voltage (normalized) on resistance vs temperature 0.0 0.5 1.0 1.5 2.0 2.5 -50 -25 0 25 50 75 100 125 150 t j , junction temperature (c) r ds (on), drain to source on resistance (normalized) v gs =10v i d =81.5a threshold voltage vs temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 -50 -25 0 25 50 75 100 125 150 t c , case temperature (c) v gs (th), threshold voltage (normalized) limited b y r ds on maximum safe operating area 10ms 1ms 100s 1 10 100 1000 1 10 100 1000 v ds , drain to source voltage (v) i d , drain current (a) limited by r dson single pulse t j =150c t c =25c ciss crss coss 10 100 1000 10000 100000 0 1020304050 v ds , drain to source voltage (v) c, capacitance (pf) capacitance vs drain to source voltage v ds =100v v ds =250v v ds =400v 0 2 4 6 8 10 12 14 0 80 160 240 320 400 480 560 640 gate charge (nc) v gs , gate to source voltage (v) gate charge vs gate to source voltage i d =163a t j =25c
APTM50SKM19G APTM50SKM19G ? rev 3 july, 2006 www.microsemi.com 6 ? 6 delay times vs current td(on) td(off) 0 20 40 60 80 100 20 60 100 140 180 220 260 i d , drain current (a) t d(on) and t d(off) (ns) v ds =333v r g =1 ? t j =125c l=100h rise and fall times vs current t r t f 0 20 40 60 80 100 120 20 60 100 140 180 220 260 i d , drain current (a) t r and t f (ns) v ds =333v r g =1 ? t j =125c l=100h hard switching zc s zvs 0 50 100 150 200 250 300 350 400 0 20 40 60 80 100 120 140 i d , drain current (a) frequency (khz) operating frequency vs drain curren t v ds =333v d=50% r g =1 ? t j =125c t c =75c t j =25c t j =150c 1 10 100 1000 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 v sd , source to drain voltage (v) i dr , reverse drain current (a) source to drain diode forward voltage switching energy vs current e on e off 0 2 4 6 8 10 20 60 100 140 180 220 260 i d , drain current (a) switching energy (mj) v ds =333v r g =1 ? t j =125c l=100h e on e off e off 0 2 4 6 8 10 12 14 16 02.557.51012.5 gate resistance (ohms) switching energy (mj) switching energy vs gate resistance v ds =333v i d =163a t j =125c l=100h m icros e mi re se rve s the rig ht to c ha nge , witho ut notice , the s pe cificatio ns and info rma tio n co nta ine d he re in microsemi's products are covered by one or more of u.s patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. u.s and foreign pa tents pending. all rights reserved.
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